TRANSPORT PROPERTIES OF 2D ELECTRON GAS IN AN n-InGaAs/GaAs DQW IN A VICINITY OF LOW MAGNETIC-FIELD-INDUCED HALL INSULATOR–QUANTUM HALL LIQUID TRANSITION-Reference-Cited by-同舟云学术

TRANSPORT PROPERTIES OF 2D ELECTRON GAS IN AN n-InGaAs/GaAs DQW IN A VICINITY OF LOW MAGNETIC-FIELD-INDUCED HALL INSULATOR–QUANTUM HALL LIQUID TRANSITION

Published:2007-06 Issue:03n04 Volume:06 Page:173-177
ISSN:0219-581X
Container-title:International Journal of Nanoscience
language:en
Short-container-title:Int. J. Nanosci.

Author:

ARAPOV YU. G.¹,GUDINA S. V.¹,HARUS G. I.¹,NEVEROV V. N.¹,SHELUSHININA N. G.¹,YAKUNIN M. V.¹,PODGORNYH S. M.¹,USKOVA E. A.²,ZVONKOV B. N.²

Affiliation:

1. Institute of Metal Physics, Ural Division RAS, Ekaterinburg 620219, Russia

2. Physical-Technical Institute at Nizhnii Novgorod State University, Nizhnii Novgorod, Russia

Abstract

The resistivity (ρ) of low mobility dilute 2D electron gas in an n- InGaAs / GaAs double quantum well (DQW) exhibits the monotonic "insulating-like" temperature dependence (dρ/dT < 0) at T = 1.8–70 K in zero magnetic field. This temperature interval corresponds to a ballistic regime (kBTτ/ħ > 0.1–3.5) for our samples, and the electron density is on an "insulating" side of the so-called B = 0 2D metal–insulator transition. We show that the observed features of localization and Landau quantization in a vicinity of the low magnetic-field-induced insulator–quantum Hall liquid transition is due to the σxy(T) anomalous T-dependence.

Publisher

World Scientific Pub Co Pte Lt

Subject

Electrical and Electronic Engineering,Computer Science Applications,Condensed Matter Physics,General Materials Science,Bioengineering,Biotechnology

Link

https://www.worldscientific.com/doi/pdf/10.1142/S0219581X07004523

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5. Quantum Hall Effect at Low Magnetic Fields