Half-Metallic Bandgap Measurement Using Circularly Polarized Infrared Light

Author:

Alhuwaymel Tariq F.1,Kubota Takahide23,Kim Jun-Young45,Takanashi Koki236,Hirohata Atsufumi1ORCID

Affiliation:

1. Department of Electronic Engineering, University of York, York YO10 5DD, UK

2. Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan

3. Center for Spintronics Research Network, Tohoku University, Sendai 980-8577, Japan

4. Department of Physics, University of York, York YO10 5DD, UK

5. Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research, Singapore 138632, Singapore

6. Center for Science and Innovation in Spintronics Core Research Cluster, Tohoku University, Sendai 980-8577, Japan

Abstract

One avenue toward next-generation spintronic devices is to develop half-metallic ferromagnets with 100% spin polarization and Curie temperature above room temperature. Half-metallic ferromagnets have unique density of states, where the majority spins are metallic but the minority spins are semiconducting with the Fermi level lying within an energy gap. To date, the half-metallic bandgap has been predominantly estimated using Jullière’s formula in a magnetic tunnel junction or measured by the Andreev reflection at low temperature, both of which are very sensitive to the surface/interface spin polarization. Alternative optical methods such as photoemission have also been employed but with a complicated and expensive setup. In this study, we developed and optimized a new technique to directly measure the half-metallic bandgap by introducing circularly polarized infrared light to excite minority spins. The absorption of the light represents the bandgap under a magnetic field to saturate the magnetization of a sample. This technique can be used to provide simple evaluation of a half-metallic film.

Funder

Engineering and Physical Sciences Research Council

Royal Society

Japan Science and Technology Corporation

Publisher

World Scientific Pub Co Pte Ltd

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

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