TETRAGONAL HEUSLER-LIKE Mn–Ga ALLOYS BASED PERPENDICULAR MAGNETIC TUNNEL JUNCTIONS

Author:

MA QINLI1,SUGIHARA ATSUSHI1,SUZUKI KAZUYA1,ZHANG XIANMIN1,MIYAZAKI TERUNOBU1,MIZUKAMI SHIGEMI1

Affiliation:

1. WPI-Advanced Institute for Materials Research, Tohoku University, Katahira 2-1-1, Sendai, Miyagi 980-8577, Japan

Abstract

Films of the Mn -based tetragonal Heusler-like alloys, such as Mn – Ga , exhibit a large perpendicular magnetic anisotropy (PMA), small damping constant, small saturation magnetization and large spin polarizations. These properties are attractive for the application to the next generation high density spin-transfer-torque (STT) magnetic random access memory (STT-MRAM). We reviewed the structure, magnetic properties and Gilbert damping of the alloy films with large PMA, and the current status of research on tunnel magnetoresistance (TMR) in perpendicular magnetic tunnel junctions (p-MTJs) based on Mn -based tetragonal Heusler-like alloy electrode, and also discuss the issues for the application of those to STT-MRAM.

Publisher

World Scientific Pub Co Pte Lt

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

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