INFLUENCE OF NONLINEAR ELECTRON MOBILITY ON RESPONSE TIME IN PHOTOREFRACTIVE SEMICONDUCTOR QUANTUM WELLS

Author:

WICHTOWSKI MAREK1,ZIOLKOWSKI ANDRZEJ1,WEINERT-RACZKA EWA1,JABLONSKI BLAZEJ1,KARWECKI WOJCIECH1

Affiliation:

1. Westpommerian University of Technology in Szczecin, Faculty of Electrical Engineering, Szczecin, 70-310, Poland

Abstract

Nonlinear transport of hot electrons in semi-insulating GaAs / AlGaAs quantum wells significantly affects their photorefractive properties. In case of two waves mixing, this influence consists, among others, in an increased shift of photorefractive grating relative to light intensity distribution. The influence of nonlinear transport on grating recording time is less examined experimentally and theoretically. This study compares numerical and analytical solutions describing grating dynamics in approximation of small fringe contrast. The influence of nonlinear electron mobility on space-charge field was examined depending on external electric field intensity and on the grating constant. It was found that in the electric field range below 20 kV/cm, the nonlinear transport of electrons does not shorten the grating generation time.

Publisher

World Scientific Pub Co Pte Lt

Subject

Physics and Astronomy (miscellaneous),Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

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