STRUCTURAL PROPERTIES OF AlN FILMS WITH OXYGEN CONTENT DEPOSITED BY REACTIVE MAGNETRON SPUTTERING: XRD AND XPS CHARACTERIZATION-Reference-Cited by-同舟云学术

STRUCTURAL PROPERTIES OF AlN FILMS WITH OXYGEN CONTENT DEPOSITED BY REACTIVE MAGNETRON SPUTTERING: XRD AND XPS CHARACTERIZATION

Published:2011-02 Issue:01n02 Volume:18 Page:23-31
ISSN:0218-625X
Container-title:Surface Review and Letters
language:en
Short-container-title:Surf. Rev. Lett.

Author:

GARCÍA-MÉNDEZ MANUEL¹²,MORALES-RODRÍGUEZ SANTOS³,SHAJI SADASIVAN⁴²,KRISHNAN BINDU⁴²,BARTOLO-PÉREZ PASCUAL⁵

Affiliation:

1. Centro de Investigación en Ciencias Físico Matemáticas, Facultad de Ciencias Físico-Matemáticas de la UANL, Manuel L. Barragán S/N, Cd. Universitaria, San Nicolás de los Garza, N.L.C.P. 66450, Mexico

2. Centro de Innovación, Investigación y Desarrollo en Ingeniería y Tecnología-UANL, Km. 10 Nueva Carretera al Aeropuerto, Internacional de Monterrey, PIIT Monterrey, C.P. 66600, Apodaca, Nuevo León, Mexico

3. Facultad de Ingeniería Mecánica y Eléctrica de la UAC, avenida Barranquillas S/N Col. Guadalupe, C.P. 25750, Monclova, Coah, Mexico

4. Facultad de Ingeniería Mecánica y Eléctrica de la UANL, Manuel L. Barragán S/N, Cd. Universitaria, San Nicolás de los Garza, N.L.C.P. 66450, Mexico

5. Cinvestav-IPN, Unidad Méridaî, Departamento de Física Aplicadaî, Km. 6 Antigua Carr. a Progreso, C.P. 97310 Mérida, Yuc., Mexico

Abstract

A set of aluminium nitride ( AlN ) and oxidized AlN ( AlNO ) thin films were grown with the technique of direct current (dc) reactive magnetron sputtering. The main purpose of this investigation is to explore the influence of the oxygen on the structural properties of AlN and AlNO films. The crystalline properties and chemical identification of phases were studied by X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS), respectively. Electrical properties were analyzed from I-V measurements. It was found that films crystallized under the AlN würzite structure and presented a polycrystalline preferential growth along [0001] direction, perpendicular to substrate. Small amounts of secondary aluminium oxide phases were detected too. The oxide phases can induce defects, which can alter crystallinity of films.

Publisher

World Scientific Pub Co Pte Lt

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

https://www.worldscientific.com/doi/pdf/10.1142/S0218625X1101445X

Reference45 articles.

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