THE INVESTIGATION OF SURFACE TOPOGRAPHY DEVELOPMENT IN Si(001) AND Si(111) DURING SIMS DEPTH PROFILING-Reference-Cited by-同舟云学术

THE INVESTIGATION OF SURFACE TOPOGRAPHY DEVELOPMENT IN Si(001) AND Si(111) DURING SIMS DEPTH PROFILING

Published:2001-10 Issue:05 Volume:08 Page:453-457
ISSN:0218-625X
Container-title:Surface Review and Letters
language:en
Short-container-title:Surf. Rev. Lett.

Author:

LAU G. S.¹,TOK E. S.¹,WEE A. T. S.²,LIU R.²,LIM S. L.²

Affiliation:

1. Department of Materials Science, National University of Singapore, Singapore 119260, Singapore

2. Department of Physics, National University of Singapore, Singapore 119260, Singapore

Abstract

The oxygen ion-beam induced surface roughening observed during SIMS (secondary ion mass spectrometry) depth profiling of both the Si (001) and Si (111) surfaces has been studied by atomic force microscopy (AFM) as a function of both sputtered-depth and by varying the incident angles of the primary [Formula: see text] ion beam in the range of 44°–56°. Our result shows a surface orientation dependence of surface roughening whereby the transition roughening depth as well as the sputtering rate were observed to be greater in Si (111) than in Si (001). The orientation dependence was particularly obvious when increasing the incident angle of the [Formula: see text] ion beam from 44° to 56°. In addition, prominent elongated triangular and rectangular features are observed from sputtered Si (001) and Si (111) surfaces respectively at 56° incidence. These features may be associated with the formation of {111} and {001} facets on the sputtered Si (001) and Si (111) surfaces respectively.

Publisher

World Scientific Pub Co Pte Lt

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

https://www.worldscientific.com/doi/pdf/10.1142/S0218625X01001233

Reference6 articles.

1. Secondary ion yield changes in Si and GaAs due to topography changes during O+2 or Cs+ ion bombardment

2. Effect of surface roughening on secondary ion yields and erosion rates of silicon subject to oblique oxygen bombardment

3. A study of the secondary‐ion yield change on the GaAs surface caused by the O+2 ion‐beam‐induced rippling

4. The complex formation of ripples during depth profiling of Si with low energy, grazing oxygen beams

5. The mechanisms of etch pit and ripple structure formation on ion bombarded Si and other amorphous solids

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1. Imaging by atomic force microscopy of the properties difference of the layers covering the facets created during SIMS analysis;Applied Surface Science;2014-07

2. Surface roughening and erosion rate change at low energy SIMS depth profiling of silicon during oblique bombardment;Applied Surface Science;2006-12

3. Influence of surface orientation on the formation of sputtering-induced ripple topography in silicon;Applied Surface Science;2004-06