Affiliation:
1. Tashkent State Technical University, Tashkent, Uzbekistan
2. Institute of Radiation Problems, Azerbaijan National Academy of Sciences, Baku AZ 1143, Azerbaijan
Abstract
There arises the formation of thin films of cobalt monosilicide (CoSi) deposited into the base surface of SiO2/Si (111) using magnetron ion-plasma sputtering and subsequent thermal annealing. It was found that, in addition to the formation of CoSi silicide, also there are Co and Si atoms that do not form bonds on the surface. Therefore, in this work, we studied the surface morphology and composition of a CoSi silicon target using a scanning electron microscope. The study, silicide CoSi, was chosen as the target and standard SiO2/Si (111) was used as the substrate. The surface morphology and composition of the CoSi silicon film obtained by scanning electron microscopy had been studied. The paper reports on a method, morphology of the surface of a CoSi silicon film obtained using Raman microscopy. The results obtained are based on the fact that they were obtained using a modern magnetron sputterer, a high-vacuum thermal heater and modern devices.
Publisher
World Scientific Pub Co Pte Ltd
Subject
Condensed Matter Physics,Statistical and Nonlinear Physics
Cited by
19 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献