FULL CHARACTERIZATION AT 904 nm OF LARGE AREA Sip–n JUNCTION PHOTODETECTORS PRODUCED BY LID TECHNIQUE

Abstract

In this paper, we report the experimental data of photoresponse, namely, voltage responsivity and speed of response at λ=904 nm of silicon photodiode formed by pulsed laser-induced diffusion technique. Experimental results demonstrated that the photodiode parameters strongly depend on the laser energy and substrate temperature. Maximum responsivity is obtained for p–n junctions photodetectors prepared by laser fluence of 9.17 J/cm2 for Al -doped Si and 10.03 J/cm2 for Sb -doped Si at substrate temperature (Ts) of 598 K. The pulse response waveform of photodetectors illustrated that the rise time is not dominated by RC. Non-linearity deviation coefficient is improved by factors 1.6 for and 2.7 for for Al -doped Si and Sb -doped Si photodetectors, respectively, when Ts is raised from 300 K to 598 K.