Influence of gamma radiation on magnetoelectric properties of extruded samples of solid solution Bi85Sb15〈Te〉 modified ZrO2

Abstract

The electrical and thermal properties of extruded samples of Bi[Formula: see text]Sb[Formula: see text] [Formula: see text] modified with ZrO2 were investigated depending on the dose of gamma radiation in the temperature range [Formula: see text] K and magnetic field strength (H) [Formula: see text] A/m. It was found that an increase in the mobility in the irradiated modified Bi[Formula: see text]Sb[Formula: see text] [Formula: see text] is associated with the radiation introduction of acceptor (negatively charged) centers, which at low doses are generated mainly in the regions of the efficiency of impurity scattering of charge carriers and partially neutralized centers and, accordingly, to a certain increase in the mobility. In the extruded modified samples of the Bi[Formula: see text]Sb[Formula: see text] solid solution, irradiation with gamma quanta results not only in the generation of radiation defects (RDs) (centers), but also accompanied by their rearrangement. This causes a change in the spectrum of localized states and the electron scattering process, which leads to corresponding changes in the presented electrical and thermal parameters.