Dielectric and electrical properties of near-surface layers of TlInS2 crystals under the proton irradiation

Abstract

In this work, the dielectric and electrical properties of TlInS2 crystal have been studied in the temperature range of 300–550 K before and after being implanted with H[Formula: see text] ion. The dielectric parameters such as the real and imaginary parts of permittivity, impedance and dielectric loss have been investigated in this temperature range. The role of free ions in the relaxation process when f [Formula: see text] 10 kHz on the basis of the study of dielectric parameters in the frequency range of 25–106 Hz has been determined. It has been observed that the interdependencies of the real and imaginary parts of dielectric permittivity go beyond the standard.