FABRICATION TECHNIQUES FOR SELF-ALIGNED GaAs-BASED HBTs AND SUBMICRON GATE LENGTH FETs

Abstract

Process technologies for self-aligned AlGaAs/GaAs and InGaP/GaAs heterojunction bipolar transistors (HBTs) as well as gate definition and dry etching fabrication schemes for submicron gate length AlGaAs/GaAs-based field effect transistors (FETs) are presented. Multiple energy F + and H + ions were used to isolate the active devices for HBTs. The resistance of test wafers at 200° C showed no change over periods of more than 50 days. Highly selective dry and wet etch techniques for InGaP/GaAs and AlGaAs/GaAs material systems were used to uniformly expose heterojunctions. Reliability of the alloyed ohmic contact and feasibility of the nonalloyed ohmic contact metallizations for both p and n type GaAs layers will be discussed. The reproducible gate recess etching is one of the critical steps for AlGaAs/GaAs-based FETs. The etching selectivity, damage, pre- and post-clean procedures were studied in terms of device performance. A simple low temperature SiN x deposition and an etch-back process with optical stepper were used to demonstrate 0.1 µm Y-shape gate feature.