THE NORMAL STATE HALL EFFECT IN NdBa2-xLaxCu3O7-δ: EVIDENCE FOR HOLE LOCALIZATION BY LA DOPING

Abstract

The transport properties of sintered samples of NdBa 2-x La x Cu 3 O 7-δ with 0 ≤ x ≤ 0.3 have been studied in the normal state by Hall effect measurements. The Hall coefficient, RH is positive in the normal state and increases with increasing La doping concentration over the whole temperature range from the critical temperature, Tc, up to room temperature. The results for the Hall coefficient as a function of temperature and doping concentration were analyzed within the phenomenological narrow band and Anderson models. A good agreement between models and data was obtained. As in the phenomenological narrow band model, the band widths increase with increasing doping concentration. As in the Anderson model, the Hall angle is proportional to T2 over the whole measured temperature range for all samples. The obtained results for both models supported the view that La doping introduces electronic disorder into the CuO 2 planes. The tendency towards localization is driven by electronic disorder. In addition to hole filling, the localization is another reason for the decreasing superconducting critical temperature in these samples.