LEAKAGE CURRENT REDUCTION IN VLSI SYSTEMS

Abstract

There is a growing need to analyze and optimize the stand-by component of power in digital circuits designed for portable and battery-powered applications. Since these circuits remain in stand-by (or sleep) mode significantly longer than in active mode, their stand-by current, and not their active switching current, determines their battery life. Hence, stringent specifications are being placed on the stand-by (or leakage) current drawn by such devices. As the power supply voltage is reduced, the threshold voltage of transistors is scaled down to maintain a constant switching speed. Since reducing the threshold voltage increases the leakage of a device exponentially, leakage current has become a dominant factor in the design of VLSI circuits. In this paper, we describe a method that uses simultaneous dynamic voltage scaling (DVS) and adaptive body biasing (ABB) to reduce the total power consumption of a processor under dynamic computational workloads. Analytical models of the leakage current, dynamic power, and frequency as a function of supply voltage and body bias are derived and verified with SPICE simulation. Given these models, we show how to derive an analytical expression for the optimal trade-off between supply voltage and body bias, given a required clock frequency and duration of operation. The proposed method is then applied to a processor and is compared with DVS alone for workloads obtained using real-time monitoring of processor utilization for four typical applications.