Different void shapes in Si at the SiC thin film/Si(111) substrate interface-Reference-Cited by-同舟云学术

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Different void shapes in Si at the SiC thin film/Si(111) substrate interface

Published:2001-01-01 Issue:1 Volume:50 Page:3-8
ISSN:0022-0744
Container-title:Journal of Electron Microscopy
language:
Short-container-title:

Author:

Jinschek J.

Publisher

Oxford University Press (OUP)

Subject

Instrumentation,General Medicine

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Temperature Dependence of 3С-SiC Growth During Rapid Vacuum Thermal Silicon Treatment;Doklady BGUIR;2023-08-28

2. Epitaxial growth of 3C-SiC (111) on Si via laser CVD carbonization;Journal of Asian Ceramic Societies;2019-06-19

3. Impact of a SiGe interfacial layer on the growth of a SiC layer on Si with voids at the interface;Thin Solid Films;2018-09

4. Silicon etching using only Oxygen at high temperature: An alternative approach to Si micro-machining on 150 mm Si wafers;Scientific Reports;2015-12-04

5. Structural and phase transformations in C/Si multilayers during annealing;Technical Physics;2014-05

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