Atomic Scale Investigation Between the Heterointerfaces in BaTiO3 and Ultrawide Band-Gap Semiconductors-Reference-Cited by-同舟云学术

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Atomic Scale Investigation Between the Heterointerfaces in BaTiO3 and Ultrawide Band-Gap Semiconductors

Published:2024-07 Issue:Supplement_1 Volume:30 Page:
ISSN:1431-9276
Container-title:Microscopy and Microanalysis
language:en
Short-container-title:

Author:

Chae Christopher¹,Lee Hyunsoo²,Dheenan Ashok²,Yang Fengyuan³,Rajan Siddharth¹²,Hwang Jinwoo¹

Affiliation:

1. Department of Materials Science and Engineering, The Ohio State University , Columbus, OH , USA

2. Department of Electrical and Computer Engineering, The Ohio State University , Columbus, OH , USA

3. Department of Physics, The Ohio State University , Columbus, OH , USA

Publisher

Oxford University Press (OUP)

Link

https://academic.oup.com/mam/article-pdf/30/Supplement_1/ozae044.075/58671707/ozae044.075.pdf

Reference3 articles.

1. Investigation of the electrical properties of RF sputtered BaTiO3 films grown on various substrates

2. Demonstration of Wide Bandgap AlGaN/GaN Negative‐Capacitance High‐Electron‐Mobility Transistors (NC‐HEMTs) Using Barium Titanate Ferroelectric Gates

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