Simulation Study of a Novel Collector-up npn InGaP/GaAs Heterojunction Bipolar Transistor with a p-Type Doping Buried Layer for Current Confinement
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Published:2007-01-01
Issue:1
Volume:E90-C
Page:171-178
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ISSN:0916-8524
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Container-title:IEICE Transactions on Electronics
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language:en
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Short-container-title:IEICE Transactions on Electronics
Author:
HSU H.-t.,HSIN Y.-m.
Publisher
Institute of Electronics, Information and Communications Engineers (IEICE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials