Effects of zinc anneals in the (400-550 °C) range on the acceptor concentration in ZnTe
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Publisher
EDP Sciences
Link
http://jphys.journaldephysique.org/10.1051/jphys:0197900400110106300/pdf
Reference14 articles.
1. The nature of the predominant acceptors in high quality zinc telluride
2. Electrical and optical identification of the persistent acceptor as copper in ZnTe
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1. Spatial non-uniformity in Cd-annealed CdTe crystals;Solid State Communications;1992-12
2. Lithium and phosphorus impurities in ZnTe;Semiconductor Science and Technology;1987-10-01
3. Photoluminescence in liquid phase epitaxially grown Hg0.3Cd0.7Te;Journal of Applied Physics;1984-05-15
4. Structural defects and p-type conductivity in ZnSe;Physica B+C;1983-02
5. The segregation of impurities and the self‐compensation problem in II‐VI compounds;Journal of Applied Physics;1982-12
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