Influence of an applied electric field on the electronic properties of Siδ-doped GaAs
Author:
Publisher
EDP Sciences
Subject
Condensed Matter Physics,Instrumentation,Electronic, Optical and Magnetic Materials
Link
http://epjap.epj.org/10.1051/epjap:2003074/pdf
Reference27 articles.
1. Delta doping of III–V compound semiconductors: Fundamentals and device applications
2. Fundamental studies and device application of ?-doping in GaAs Layers and in AlxGa1?xAs/GaAs heterostructures
3. Raman scattering from electronic excitations in periodically δ-doped GaAs
4. Thomas-Fermi theory of δ-doped semiconductor structures: Exact analytical results in the high-density limit
5. Electronic transport in periodically δ‐doped GaAs layers
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