In2O3/Si heterojunction solar cells fabricated by InN oxidation
Author:
Publisher
EDP Sciences
Subject
Condensed Matter Physics,Instrumentation,Electronic, Optical and Magnetic Materials
Link
http://epjap.epj.org/10.1051/epjap:2007138/pdf
Reference22 articles.
1. Oxidation study of InN/sapphire (0001) film usingin-situ synchrotron X-ray scattering
2. Annealing Characteristics of Zn-Doped InN films on Sapphire Substrates by Reactive Magnetron Sputtering
3. Structural relation and epitaxial properties of hexagonal InN and oxidized cubic In2O3
4. Influences of In2O3Crystal Grains Formed by Annealing on Characteristics of Hexagonal InN Crystalline Films Grown on Si(111) Substrates
5. Transparent conductors—A status review
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1. INFLUENCE OF SUBSTRATE TEMPERATURE ON STRUCTURAL, ELECTRICAL AND OPTICAL PROPERTIES OF ITO THIN FILMS PREPARED BY RF MAGNETRON SPUTTERING;Surface Review and Letters;2013-10
2. Structural and nanomechanical properties of InN films grown on Si(1 0 0) by femtosecond pulsed laser deposition;Journal of Physics D: Applied Physics;2013-04-05
3. Nanomechanical Investigation of Femtosecond Pulsed Laser Deposited InN on Si(100);TMS2013 Supplemental Proceedings;2013-02-25
4. The properties of direct current sputtering deposited InN thin films under different gas flow rates;Journal of Alloys and Compounds;2009-09
5. Low-temperature growth of InN on Si(100) by femtosecond pulsed laser deposition;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2009-07
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