Defect imaging in ultra-thin SiGe (100) strain relaxed buffers
Author:
Publisher
EDP Sciences
Subject
Condensed Matter Physics,Instrumentation,Electronic, Optical and Magnetic Materials
Link
http://epjap.epj.org/10.1051/epjap:200373/pdf
Reference6 articles.
1. Relaxed SiGe buffers with thicknesses below 0.1 μm
2. A new preferential etch of silicon () with ammonia system
3. Defect Etch for <100> Silicon Evaluation
4. Dislocation Etch for (100) Planes in Silicon
5. Copper Precipitation on Dislocations in Silicon
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