Properties of nano-crystalline silicon thin film fabricated by electron beam exposure-Reference-Cited by-同舟云学术

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Properties of nano-crystalline silicon thin film fabricated by electron beam exposure

Published:2013-08 Issue:2 Volume:63 Page:20302
ISSN:1286-0042
Container-title:The European Physical Journal Applied Physics
language:
Short-container-title:Eur. Phys. J. Appl. Phys.

Author:

Lee Eun Hye,Lee Su Woong,Eom Young Ju,Won Hae Na,Jang Jin,Moon Byeong Yeon,Park Kyu Chang

Publisher

EDP Sciences

Subject

Condensed Matter Physics,Instrumentation,Electronic, Optical and Magnetic Materials

Link

http://epjap.epj.org/10.1051/epjap/2013130161/pdf

Reference28 articles.

1. P-4: Microcrystalline Silicon TFTs for Active Matrix Displays

2. XeCl Excimer Laser Annealing Used to Fabricate Poly-Si TFT's

3. Properties of a-Si1−xGex:H and a-Si1−xGex:H:F alloys

4. XeCl Excimer Laser Annealing Used to Fabricate Poly-Si Tfts

5. High-performance TFTs fabricated by XeCl excimer laser annealing of hydrogenated amorphous-silicon film

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Pseudo-Crystalline Silicon Thin Films with Carbon Nanotube Electron Beam Exposure;Journal of Nanoscience and Nanotechnology;2017-11-01

2. P-66: Crystallized Thin Film using the Carbon Nanotube Electron Beam (C-Beam ) for High Performance Thin Film Transistor;SID Symposium Digest of Technical Papers;2015-06

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