The discharged characteristics of capacitively coupled Ar/N2 plasma driven by the dual frequency 8/100 MHz

Author:

Yin GuiqinORCID,Zhou Youyou,Yuan Qianghua

Abstract

The discharged characteristics of capacitively coupled Ar/N2 plasma driven by 8 MHz and 100 MHz are investigated at low pressure. The mean electron temperatures at central plasma area are discussed by the corona model with the high frequency (HF) power increase (low frequency (LF) power is fixed) and argon increase. The second positive system (SPS) of nitrogen molecular (C3Πu→B3Πg) from 370 nm to 410 nm in the N2 optical emission spectrum is used to calculate the rotational and vibrational temperature of nitrogen molecular. These results show that the mean electron temperatures both decrease with the argon increase and the HF power increase. The rotational temperature increase with argon increase and decrease with the HF power increase. The particle-in-cell/Monte Carlo (PIC/MC) method is used to calculate the electric density, ion density, electron temperature and electron energy probability function (EEPF) according to experimental conditions. These results show that the electron temperatures both decrease with HF power increase and argon content increase, which are agreed with the spectral results. The EEPF show that the low and high energy electrons both increase with the HF power increase and argon increase. The energy exchange by these higher energy electrons is large, which result in the decrease of electron temperatures.

Funder

Northwest Normal University

Publisher

EDP Sciences

Subject

Condensed Matter Physics,Instrumentation,Electronic, Optical and Magnetic Materials

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号  京ICP备18003416号-3