Electronics for deep space cryogenic applications
Author:
Publisher
EDP Sciences
Subject
General Physics and Astronomy
Link
http://jp4.journaldephysique.org/10.1051/jp420020068/pdf
Cited by 15 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Gaussian process-based device model toward a unified current model across room to cryogenic temperatures;2024 IEEE 36th International Conference on Microelectronic Test Structures (ICMTS);2024-04-15
2. Cryogenic Behaviors of 65nm Transistor: On-State IV and Parameters;2024 IEEE Workshop on Microelectronics and Electron Devices (WMED);2024-03-29
3. Low-temperature stable ferroelectric–antiferroelectric transition for cryogenic energy storage application;Applied Physics Letters;2024-03-18
4. Study of Cryogenic MOSFET Sub-Threshold Swing Using Ab Initio Calculation;IEEE Electron Device Letters;2023-10
5. Cryogenic Electron Mobility and Subthreshold Slope of Oxygen-Inserted (OI) Si Channel nMOSFETs;2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD);2023-09-27
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