Long-term transient radiation effects in high-speed signal switches implemented in 0.1 um E/D pHEMT process-Reference-Cited by-同舟云学术

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Long-term transient radiation effects in high-speed signal switches implemented in 0.1 um E/D pHEMT process

Published:2019 Issue: Volume:30 Page:10004
ISSN:2271-2097
Container-title:ITM Web of Conferences
language:
Short-container-title:ITM Web Conf.

Author:

Kuznetsov Aleksander,Elesin Vadim,Usachev Nikolay,Chukov George

Abstract

The transient radiation effects in 0.1 μm E/D pHEMT high-speed signal switches have been investigated. It was shown that a signal switch transient recovery time caused by pulsed irradiation can exceed 100 ms due to a switch control driver’s functional upset.

Publisher

EDP Sciences

Subject

General Medicine

Link

https://www.itm-conferences.org/10.1051/itmconf/20193010004/pdf

Reference6 articles.

1. An X- and Ku-Band 8-Element Phased-Array Receiver in 0.18-$\mu{\hbox{m}}$ SiGe BiCMOS Technology

2. Small-signal optimization approach to design of microwave signal switch ICs on MOS transistors

3. Datasheet MAPS-010163 URL: https://cdn.macom.com/datasheets/MAPS-010163.pdf

4. Transient radiation effects in microwave monolithic integrated circuits based on heterostructure field-effect transistors: Experiment and model

5. Nikiforov A. Yu., Skorobogatov P. K., Chumakov A. I., Kirgizova A. V., Petrov A. G., Kutsko P. P., Kuzmin A. V., Borisov A. A., Telets V. A., Punin V. T., Figurov V. S., Russian Microelectronics 38, 2, doi: 10.1134/S1063739709010028 (2009)

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