Author:
Desthieux Anatole,Posada Jorge,Grand Pierre-Philippe,Broussillou Cédric,Bazer-Bachi Barbara,Goaer Gilles,Messou Davina,Bouttemy Muriel,Drahi Etienne,Roca i Cabarrocas Pere
Abstract
Passivating contacts are becoming a mainstream option in current photovoltaic industry due to their ability to provide an outstanding surface passivation along with a good conductivity for carrier collection. However, their integration usually requires long annealing steps which are not desirable in industry. In this work we study PECVD as a way to carry out all deposition steps: silicon oxide (SiOx), doped polycrystalline silicon (poly-Si) and silicon nitride (SiNx:H), followed by a single firing step. Blistering of the poly-Si layer has been avoided by depositing (p+) microcrystalline silicon (μc-Si:H). We report on the impact of this deposition step on the SiOx layer deposited by PECVD, and on the passivation properties by comparing PECVD and wet-chemical oxide in this hole-selective passivating contact stack. We have reached iVoc > 690 mV on p-type FZ wafers for wet-chemical SiOx\(p+) μc-Si\SiNx:H with no annealing step.
Funder
Association Nationale de la Recherche et de la Technologie
Agence Nationale de la Recherche
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials
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