Silicon carbide against silicon: a comparison in terms of physical properties, technology and electrical performance of power devices
Author:
Publisher
EDP Sciences
Subject
General Physics and Astronomy,General Engineering
Link
http://jp3.journaldephysique.org/10.1051/jp3:1993186/pdf
Cited by 22 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Design, Fabrication and Characterization of 10 kV 4H-SiC BJT for the Phototransistor Target;Romanian Journal of Information Science and Technology;2023-03-27
2. Optimized Junction Termination Extension and Ring System for 11 kV 4H-SiC BJT;2022 International Semiconductor Conference (CAS);2022-10-12
3. Effect of pH on transport characteristics of silicon carbide nanowire field-effect transistor (SiCNW-FET);Journal of Materials Science: Materials in Electronics;2021-01-02
4. Interface state density evaluation of high quality hetero-epitaxial 3C–SiC(001) for high-power MOSFET applications;Materials Science and Engineering: B;2015-08
5. Formation of silicon carbide at low temperatures by chemical transport of silicon induced by atmospheric pressure H2/CH4 plasma;Thin Solid Films;2008-08
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