High Quality Single Crystal Recrystallization of Thin 4H-SiC Films Deposed by PVD Techniques, a way for New Emerging Fields-Reference-Cited by-同舟云学术

High Quality Single Crystal Recrystallization of Thin 4H-SiC Films Deposed by PVD Techniques, a way for New Emerging Fields

Published:2023-05-30 Issue: Volume:343 Page:21-28
ISSN:1662-9779
Container-title:Solid State Phenomena
language:
Short-container-title:SSP

Author:

Usureau Elise¹,Vuillermet Enora¹,Lazar Mihai²,Andrieux Aurore³,Jacquemot Alexandre⁴

Affiliation:

1. University of Technology of Troyes

2. Université de Lyon

3. Laboratoire Interdisciplinaire Carnot de Bourgogne (ICB), UMR 6303 CNRS, University Bourgogne Franche-Comté, 21078 Dijon

4. MICROTEST, Z.A. La Garrigue du Rameyron, 84830 Serignan

Abstract

SiC sputtered and e-beam evaporated layers have been deposited on 4H-SiC substrates. High temperature annealing with two plateaus at 1400°C and 1700°C is performed to recrystallize the layers. The crystallinity was investigated by Raman spectroscopy with laser lines of 785, 405 and 325nm. To determine the electrical conductivity of the layers, electrical measurements are made. Only the electron beam evaporated layers presents a recrystallization close to homoepitaxial quality but, contrary to sputtered layers, they don’t have an electrical conductivity.

Publisher

Trans Tech Publications, Ltd.

Subject

Condensed Matter Physics,General Materials Science,Atomic and Molecular Physics, and Optics

Link

https://www.scientific.net/SSP.343.21.pdf

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