Abstract
We present a calibrated bulk mobility model for 4H-SiC. Hall measurements are performed on 4H-SiC samples to determine the bulk mobility/resistivity in the temperature range of 200-500K. We observe that temperature dependence of bulk resistivity cannot be predicted by popular mobility models available within TCAD tools. A careful investigation reveals that these popular mobility models need to be revised and replaced by a comprehensive model that can describe the impurity scattering effects dominant at low temperatures. We present a well calibrated bulk mobility model for 4H-SiC exhibiting excellent agreement with measured data, making it suitable for device simulation purposes using TCAD tools.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
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