Morphology and Conductivity Characteristics of Polycrystalline Silicon Thin Film Deposited by Plasma-Enhanced Vapor Deposition in Textured Substrate-Reference-Cited by-同舟云学术

Morphology and Conductivity Characteristics of Polycrystalline Silicon Thin Film Deposited by Plasma-Enhanced Vapor Deposition in Textured Substrate

Published:2022-03-25 Issue: Volume:1 Page:1-6
ISSN:2813-1002
Container-title:Engineering Innovations
language:
Short-container-title:EI

Author:

Muhida Riza¹,Riza Muhammad¹,Dunan Hendri²,Pratowo Bambang²,Cucus Ahmad²,Soewito ¹,Sutjipto Agus Geter Edy³,Muhida Rifki⁴

Affiliation:

1. Universitas Bandar Lampung

2. University of Bandar Lampung

3. Universiti Malaysia Pahang

4. Universitas Putra indonesia Yptk Padang

Abstract

We investigate the characteristics of polycrystalline Silicon (poly-Si) thin films for solar cells produced by very high frequency (VHF) plasma enhanced chemical vapor deposition using a conductive scanning probe microscope (SPM). We measure the surface morphology and local current images are simultaneously of the poly-Si layers with a thickness, d=2 mm, formed on textured Ag/SnO2/glass in the range of RMS based-textured substrate (a) s=85nm, (b) s=42nm and (c) s=2nm respectively. Influences of the substrate texture on the crystal growth as well as the local current flow are discussed. Where we found that the average of local current proportional with crystallinity, where the poly-Si layer that has rich crystallinity indicated low conductivity that yield high local current.

Publisher

Trans Tech Publications, Ltd.

Link

https://www.scientific.net/EI.1.1.pdf

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