Proposal of Damage-Free SiC Wafer Dicing Using Water Jet Guided Laser

Author:

Kadoya Shotaro1,Takahashi Satoru1,Michihata Masaki1,Ohtani Noboru2,Abe Kozo2,Arimura Shunsuke3

Affiliation:

1. The University of Tokyo

2. Kwansei Gakuin University

3. MAKINO Milling Machine Co., Ltd.

Abstract

A damage-free SiC wafer dicing method has been strongly required for practical applications of power devices. In this research, we propose water jet guided laser processing as a novel dicing method. Water jet guided laser processing, which uses a high-pressure fine water jet as waveguide, could generate no cracks or dislocations in crystal. In this paper, water jet guided laser grooving quality was evaluated to demonstrate there should be no chippings and basal plane dislocations. Scanning electron microscopic and X-ray topography observations were conducted. The results indicated the superiority of water jet guided laser dicing to a conventional dicing method.

Publisher

Trans Tech Publications, Ltd.

Reference5 articles.

1. Y.H. Wang, J.M. Hsu, M.H. Weng, C.H. Chen, Y.C. Hsieh, in Proceedings of CSS MANTECH Conference (Denver, Colorado, USA, 2014) p.271–274.

2. E. Ohmura, F. Fukuyo, K. Fukumitsu, H. Morita, J. Achievements in Materials and Manufacturing Engineering, vol. 17, p.381–384 (2006).

3. D. Lewke, K.O. Dohnke, H.U. Zühlke, M.C. Barreto, M. Schellenberger, A. Bauer, H. Ryssel, Mater. Sci. Forum, vol. 821–823, p.528–532 (2014).

4. M. Skowronski, S. Ha, J. Apply. Phys. 99, 011101 (2006).

5. B. Richerzhagen, U.S. Patent No. 5,902,499 (11 May 1999).

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