Evolution of Defect and Hydrogen-Related Low Temperature Photoluminescence Spectra with Annealing for Hydrogen or Helium Implanted 6H SiC-Reference-Cited by-同舟云学术

Evolution of Defect and Hydrogen-Related Low Temperature Photoluminescence Spectra with Annealing for Hydrogen or Helium Implanted 6H SiC

Published:2005-05 Issue: Volume:483-485 Page:493-496
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Yan Fei¹,Devaty Robert P.¹,Choyke Wolfgang J.¹,Gali Adam²,Schmid Frank³,Pensl Gerhard⁴,Wagner Günter⁵

Affiliation:

1. University of Pittsburgh

2. Hungarian Academy of Sciences

3. University of Erlangen-Nürnberg

4. Friedrich-Alexander-Universität Erlangen-Nürnberg

5. Leibnitz Institut für Kristallzüchtung IKZ

Abstract

A set of four lightly p-type 6H SiC boule samples was implanted with H or He and annealed in isochronal stages from 950°C to 1500°C. Differences in the hydrogen, DI and DII low temperature photoluminescence spectra are observed and compared. Surprisingly, the hydrogen spectrum appears after a 1300°C anneal in the He implanted samples. A number of unidentified damage lines are also reported.

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.483-485.493.pdf

Reference13 articles.

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3. A. Gali, B. Aradi, D. Heringer, W.J. Choyke, R.P. Devaty and S. Bai: Appl. Phys. Lett. 80 (2002), p.237.

4. W.J. Choyke, L. Patrick and P.J. Dean: Phys. Rev. B 10 (1974), p.2554.

5. L. Patrick and W.J. Choyke: Phys. Rev. B5 (1972), p.3253.

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