Electrical Characteristics of 4H-SiC BJTs at Elevated Temperatures-Reference-Cited by-同舟云学术

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Electrical Characteristics of 4H-SiC BJTs at Elevated Temperatures

Published:2005-05 Issue: Volume:483-485 Page:897-900
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Lee Hyung Seok¹,Domeij Martin²,Danielsson Erik¹,Zetterling Carl Mikael³,Östling Mikael³

Affiliation:

1. KTH, Royal Institute of Technology

2. TranSiC AB

3. KTH Royal Institute of Technology

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.483-485.897.pdf

Reference8 articles.

1. B. J. Baliga, IEEE Trans. Electron Devices Vol. 43 (1992), p.1717.

2. T.P. Chow: 1st International Workshop on ultra-low loss Power Device Technology (2000), p.117.

3. W. Liu, E. Danielsson, C-M. Zetterling, and M. Östling B. J. Baliga, , Mater. Res. Soc. Symp. Proc. Vol. 433-436 (2002), pp.781-784.

4. M. Domeij, U. Zimmermann, D. Aberg, J. Osterman, A. Hallen, and M. Östling, Mater. Res. Soc. Symp. Proc. Vol. 433-436 (2003), pp.847-850.

5. S. P. Marsh, IEEE Trans. Electron Devices Vol. 47 (2000), p.288.

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. 2D Electric field imagery in 4H-SiC power diodes using OBIC technique;The European Physical Journal Applied Physics;2015-10-30

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