Affiliation:
1. KTH, Royal Institute of Technology
2. TranSiC AB
3. KTH Royal Institute of Technology
4. Acreo AB
5. Linköping University
Abstract
4H-SiC BJTs were fabricated using epitaxial regrowth instead of ion implantation to form a highly doped extrinsic base layer necessary for a good base ohmic contact. A remaining p+ regrowth spacer at the edge of the base-emitter junction is proposed to explain a low current gain of 6 for the BJTs. A breakdown voltage of 1000 V was obtained for devices with Al implanted JTE.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference5 articles.
1. A. Agarwal et al.: Mat. Res. Soc. Symp. Proc. 742 (2003), p. K7. 3. 1.
2. J. Zhang, Y. Luo, P. Alexandrov, L. Fursin and J. H. Zhao: IEEE Elec. Dev. Lett. 24 (2003), p.327.
3. U. Lindefelt: J. Appl. Phys. 84 (1998), p.2628.
4. C-F. Huang and J. A. Cooper, IEEE Electron Device Letters, Vol. 24 (2003), p.396.
5. E. Danielsson, C. -M. Zetterling, M. Östling, U. Forsberg and E. Janzén: Mat. Sci. Forum 389-393 (2002), p.1337.
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