Tuning Oxygen Concentration at Low and High Temperature IG Process and Boron Concentration in Epitaxial Wafer for the Gettering of Metal Impurities-Reference-Cited by-同舟云学术

Tuning Oxygen Concentration at Low and High Temperature IG Process and Boron Concentration in Epitaxial Wafer for the Gettering of Metal Impurities

Published:2003-09 Issue: Volume:95-96 Page:539-546
ISSN:1662-9779
Container-title:Solid State Phenomena
language:
Short-container-title:SSP

Author:

Shabani Mohammad B.¹,Shiina Y.²,Shimanuki Y.²

Affiliation:

1. SUMCO Corporation

2. Mitsubishi Material Silicon Co

Publisher

Trans Tech Publications, Ltd.

Subject

Condensed Matter Physics,General Materials Science,Atomic and Molecular Physics, and Optics

Link

https://www.scientific.net/SSP.95-96.539.pdf

Reference23 articles.

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4. M. B. Shabani, T. Yoshimi, S. Okuuchi, T. Shingyoji, and F. G. Kirscht, in Crystalline Defects and Contamination: Their Impact and Control in Device Manufacturing II, B. O. Kolbesen, C. Claeys, P. Stallhofer, and F. Tardiff, Editors, PV 92-22, p.318, The Electrochemical Society Proceedings, NJ (1997).

5. S. Sadamitsu, S, Ogushi, Y. Koike, N. Reilly, T. Nagashima, S. Sano and H. Tsuya, Solid State Phenomena, 57-58 (Gadest 97), (1997), p.53.

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