Shallow P Donors in 3C-, 4H- and 6H-SiC-Reference-Cited by-同舟云学术

Shallow P Donors in 3C-, 4H- and 6H-SiC

Published:2006-10 Issue: Volume:527-529 Page:593-596
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Isoya Junichi¹,Katagiri Masayuki¹,Umeda T.¹,Son Nguyen Tien²,Henry Anne²,Gali Adam³,Morishita Norio⁴,Ohshima Takeshi⁵,Itoh Hisayoshi⁴,Janzén Erik²

Affiliation:

1. University of Tsukuba

2. Linköping University

3. Hungarian Academy of Sciences

4. Japan Atomic Energy Agency

5. QST

Abstract

EPR spectra originating from phosphorus shallow donors occupying silicon sites in 3C-, 4H-, and 6H-SiC are identified by using CVD grown films in which the interference from the signals from the nitrogen shallow donors is practically absent. Phosphorus donors occupying both silicon and carbon sites are observed in high-energy phosphorus ion implanted semi-insulating 6H-SiC which was also free from the interference from the signals from the nitrogen shallow donors.

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.527-529.593.pdf

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