Highly Uniform SiC Epitaxy for MESFET Fabrication-Reference-Cited by-同舟云学术

Highly Uniform SiC Epitaxy for MESFET Fabrication

Published:2006-10 Issue: Volume:527-529 Page:195-198
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Zhang Jie¹,Mazzola Janice²,Hoff Carl¹,Rivas C.¹,Romano Esteban¹,Casady Janna R. B.¹,Mazzola Michael S.³,Casady Jeff B.¹,Matocha Kevin⁴

Affiliation:

1. TranSiC /Fairchild Semiconductor.

2. Semisouth Laboratories Inc.

3. Mississippi State University

4. General Electric Global Research

Abstract

This paper presents SiC CVD epitaxy for MESFET fabrication in a horizontal hot-wall reactor with gas foil rotation. Excellent uniformity of < 2% for thickness and < 10% for doping has been routinely obtained for both 3x2-in. and 1x3-in. growth. The highly uniform epitaxy is maintained for the growth of a large range of doping concentrations (less than 5x1015 to greater than 1.5x1019 cm-3) and thicknesses (0.25 – 60 μm). MESFET buffer/channel structure has been characterized with SIMS measurement showing sharp interface transition. Pinch-off voltages are extracted from CV measurements over a full 2-in. wafer.

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.527-529.195.pdf

Reference2 articles.

1. E. Morvan, O. Noblanc, C. Dua and C. Brylinski: Materials Science Forum Vols. 353-356 (2001), p.669.

2. U. Forsberg, Ph. D thesis: CVD Growth of Silicon Carbide for High Frequency Applications, Linköping University, Sweden (2001) Doping map (cm-3) Doping map (cm-3) Pinch-off voltage map (V) Pinch-off voltage map (V).

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