Preparation of 100 GHz InP Transferred Electron Devices

Abstract

This paper reports on the development of InP transferred-electron-device sources in mainland of China for operation at around 100 GHz. Using n+-n-n+ structure with graded doping profiles, the oscillations were obtained at 101.8 GHz from a 1 μm structure with an n-doped drift zone and the doping concentration linearly increases from 1.0×1016 to 3.0×1016cm-3. Its continuous wave radio frequency (CWRF) output power was evaluated to be several milliwatt and these results are believed to correspond to a fundamental mode operation. This result is attributed to a processing technique based on the use of etch-stop layers, removal of substrate and the formation of good ohmic contacts.