Study on Wurtzite-ScxAI1-XN Thin Film: A Review

Abstract

A review of the recent study on w-ScxAI1-XN alloy is presented in this paper. w-ScxAI1-XN alloy is a high temperature piezoelectric material, which exhibits a good balance between high maximum use temperature and large piezoelectricity. The experiment results have shown the piezoelectric modulus d33for ScxAI1-XN with x=0.43 reached up to 27.6pCN-1, which is at least 400-500% larger than AIN. This piezoelectric alloy thin film material can be grown on various substratesCe.g. silicon (001), AI2O3(0001), MgO (111), TiN(111), etc.Cby dual radio frequency magnetron reactive co-sputtering system. The origin of the anomalous piezoelectric response based on quantum mechanical calculation and the dielectric properties based on experimental measurement in w-ScxAI1-XN alloy have been also reviewed in this paper.