Wet Etching of Aluminum Periodic Patterns in Micrometer-Scale

Abstract

In the process of deep etching of silicon, the metal film or the oxide film served as silicon protective layer needed to be etched before using plasma etching technology. In order to solve the etch rates variance of different aperture sizes and different pitchs periodic patterns, by controlling the water bath temperature and etching time, the etch rates of different aperture sizes and different pitchs periodic patterns at 50 degree centigrade had been developed. Also we contrasted the etching results at different bath temperatures and got the controllable and suitable wet etching bath temperature 50 degree centigrade. At last, the paper further explores the effects of feature size and the wet etching bath temperature on etch rate.