Analysis of C-V Characteristics of InP(p)/InSb/Al2O3/Au MIS Structures in Wide Temperature Range

Abstract

Superscript textThe III-V semiconductors materials and in particularly Indium Phosphide are a promising candidates for the elaboration of high speed electronic compounds. The importance of the interface study is increasing considerably in the last years to understand, the mechanism of interface formations and to control perfectly the technology of the elaborated compounds. This study presents an electrical characterization of InP(p)/InSb/Al2O3/ Au structures in the range of temperature varying from the temperature of liquid nitrogen to the temperature of 400°K. In order to give the evolution of electrical parameters of these structures with temperature, we have realized Capacitance-Voltage measurements at high frequency for different temperatures. The found results show that there is dispersion in the accumulation region as function with temperature. The quantity of positive charges in the insulator is estimated to 1.37×1012 atm/cm2 at room temperature. This value decreases slightly with increasing temperature. It varies fromSuperscript text 1.57×1012 atm/cm2 at 77°K to 1.12×1012 atm/cm2 at 400°K. The interface insulator/semiconductor of our samples presents a good electronical quality, the state density is equal to 4.1011 eV-1.cm-2 at room temperature, this one increases from 4.7×1010 eV-1.cm-2 to 7.1011 eV-1.cm-2 when temperature increases from 77°K to 400°K.