Affiliation:
1. Guizhou University of Finance and Economics
2. Guizhou University
Abstract
C(4×4) reconstruction on arsenic-rich GaAs(001) surface after phase transition has been investigated from the experiment and simulation. We found that the c(4×4) As-rich reconstruction structure of the GaAs (001) surface can be best depicted with the model which there are three As-As dimers without Ga-As dimers in a reconstructed unit cell, and these dimers are found to be aligned perpendicular to the As dimers on β2(2×4) surface.
Publisher
Trans Tech Publications, Ltd.
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