Far Infrared Emission and Population Inversion of Hot Holes in MQW InGaAs/GaAs Heterostructures under Real Space Transfer-Reference-Cited by-同舟云学术

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Far Infrared Emission and Population Inversion of Hot Holes in MQW InGaAs/GaAs Heterostructures under Real Space Transfer

Published:1998-12 Issue: Volume:297-298 Page:261-264
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Aleshkin V.Ya.,Andronov A.A.,Antonov A.V.,Bekin N.A.,Gavrilenko A.V.,Gavrilenko V.I.,Revin D.G.,Uskova E.A.,Zvonkov B.N.¹,Zvonkov N.B.,Knap W.,Lusakowski J.,Skierbiszewski Czeslaw²

Affiliation:

1. Nizhny Novgorod State University

2. Polish Academy of Sciences

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.297-298.261.pdf

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Hot-hole lateral transport in a two-dimensional GaAs/Al0.3Ga0.7As structure;Semiconductors;2001-04

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