The Preparation of World-Class Single Crystal Silicon Carbide Wafers Using High Rate Chemical Mechanical Planarization Slurries-Reference-Cited by-同舟云学术

The Preparation of World-Class Single Crystal Silicon Carbide Wafers Using High Rate Chemical Mechanical Planarization Slurries

Published:2008-09 Issue: Volume:600-603 Page:839-842
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

White Michael L.¹,Reggie Stan¹,Naguib Nevin¹,Nicholson Kenneth²,Gilliland Jeffrey¹,Walters Alicia¹

Affiliation:

1. Cabot Microelectronics Corporation

2. Northeastern II University

Abstract

The influence of the chemical mechanical planarization process on the 4o off-axis 4HN SiC removal rate for silicon carbide slurry produced by Cabot Microelectronics Corporation (CMC) has been studied. A detailed kinetic analysis was applied and the linearity of an Arrhenius-like activation energy plot suggests that the primary removal occurs from particles adhered to the pad surface.

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.600-603.839.pdf

Reference10 articles.

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