Effects of O2 Ambient on Structural, Optical and Electrical Properties of Hafnium Oxide Thin Films Prepared by E-Beam Evaporation

Abstract

In this paper, thin HfO2 films were grown by using E-beam evaporation technique in vacuum and O2 ambient, respectively. Effects of O2 ambient on structural, optical and electrical properties of the HfO2 films were investigated by deploying x-ray photoelectron spectroscopy, ultraviolet visible spectroscopy, I-V and C-V characteristics. Results show that the O2 ambient deposited HfO2 films exhibited excellent structural, optical and electrical properties as compared with vacuum ambient HfO2 films, which especially performs a low content of metal Hf, a high transmittance, a low leakage current and a high dielectric constant.