Affiliation:
1. UMR CNRS 5628, INP Grenoble-MINATEC
2. National Institute of Advanced Industrial Science and Technology (AIST)
3. Grenoble INP–CNRS-UJF
Abstract
The conditions to succeed in growing 3C-SiC single crystals are first, make available large 3C-SiC seeds and second, develop a suitable growth process. In this paper, we will address those two issues by reviewing the most recent results in the field. Nucleation, growth, structural quality and doping results will be presented. New insights on 3C bulk growth will be discussed with respect to a future development of real bulk 3C-SiC ingots.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Cited by
15 articles.
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