Theoretical Calculation and Simulation for Microcantilevers Based on SiC Epitaxial Layers

Abstract

The resonant frequency and Q factor of the SiC microcantilever were theoretically analyzed and calculated based on the stereotyped basic theories of the cantilever beam, and the relationship between the vibration mode and structure geometries was also simulated. Modal analysis by means of finite element method was performed on millimeter-, micron-and nanoscale microcantilevers, and the results showed that the smaller the microstructure was, the higher the resonant frequency can be obtained. The Q factor can be extracted from hamonic spectra after modal analysis, and the amplitude of Q factor was about 105. This paper shows that SiC epitaxial layers have great potential in microcantilevers.