Affiliation:
1. Kwansei Gakuin University
2. Toyo Tanso Corp.
Abstract
Mechanism of surface roughening caused by the polishing induced subsurface damage on 4o off-cut 4H-SiC (0001) substrate during thermal etching, CVD epitaxial growth, and the subsequent high temperature annealing was investigated in the wide temperature range of 1000-1800°C. Different from the previous study based on a macroscopic characterization by optical microscopy, microscopic characterization based on a scanning electron microscopy (SEM) was employed in this study. By utilizing the SEM operated under various conditions, disordered step arrangements as well as stacking faults and dislocations were imaged. The obtained results revealed that the SFs cause the fluctuation in the step kinetics, resulting in the step bunching formation during the thermal process.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
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