Ultraviolet Photoluminescence Imaging of Stacking Fault Contraction in 4H-SiC Epitaxial Layers

Author:

Mahadik Nadeemullah A.1,Stahlbush Robert E.1,Caldwell Joshua D.1,Hobart Karl D.1

Affiliation:

1. U.S. Naval Research Laboratory

Abstract

Shockley stacking fault (SSF) contraction in 4H-SiC was investigated, in-situ, under varying temperature and ultraviolet (UV) intensity. Contraction of single SSFs at room temperature was observed for the first time under low power UV excitation of 0.04 W/cm2. At temperatures above 150 °C, complete SSF contraction occurred for UV power at 0.2 W/cm2. In contrast to expansion, SSF contraction occurred in discrete jumps between pinning sites along existing C-core partials. Luminescence from the pinning sites suggest they may be local concentrations of point defects. Additionally, a change in the line direction of the Si-core partials by ~25o off the direction was observed.

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

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