Affiliation:
1. Japan Fine Ceramics Center
2. ACT Corporation
Abstract
Shallow defects, which were induced by mechanical treatment, on 4H-SiC wafers were investigated. The density and the distribution in depth of shallow defects on the wafers were depended on wafer venders. Most of serious defects such as dislocation array (DA), triangular stacking fault (TRSF) and triangular defect (TRD) in epitaxial film were demonstrated to be caused by shallow dislocations on the surface of the wafers. Revised mechanical polish can reduce the densities of DA, TRSF and TRD in epitaxial film.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
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