Affiliation:
1. University Malaysia Perlis
Abstract
Reduction in threshold current density is the major challenge in the field of semiconductor laser design. The threshold current density can be minimized by introducing low dimensional material system with narrow band gap. InN has a narrow band gap of 0.7 eV and quantum dot provides three dimensional confinement factor. In this paper, we propose then InN quantum dot as the active layer material that will serve both the purpose of narrow band gap and three dimensional confinement. The simulation results show that the current density reduces drastically with the cavity length.
Publisher
Trans Tech Publications, Ltd.
Reference7 articles.
1. Fujitsu Laboratories Ltd. Quantum Dot Laser Technology. Copyright 1995 – 2008 http: /www. fujitsu. com/global/news/awards/labs/20060912qdlaser. html.
2. Y. Arakawa and H. Sakaki: Multidimensional Quantum Well LASER and Temperature Dependence of its Threshold Current, Appl. Phys. Lett., vol. 40, no. 11, p.939–941, 1982..
3. Y. Arakawa, Takao Someya and Koichi Tachibana: Growth and Physics of Nitride-based Quantum Dots for Optoelectronics Applications, IPAP Conf. Series 1 pp.403-408 Proc. Int. workshop on nitride semiconductor.
4. Abdelmajid Salhi, Gabriele Rain`o, Laura Fortunato, Vittorianna Tasco, Giuseppe Visimberga, Luigi Martiradonna, Maria Teresa Todaro, Milena De Giorgi, Roberto Cingolani, Achim Trampert, Massimo De Vittorio, and Adriana Passaseo: Enhanced Performances of Quantum Dot Lasers Operating at 1. 3 μm , IEEE Journal on Selected Topics in Quantum Electronics, Vol. 14, No. 4, July/August (2008).
5. D. Bimberga,M. Grundmanna, F. Heinrichsdorffa, N.N. Ledentsovb, V.M. Ustinovb, A.E. Zhukovb, A. R. Kovshb, M. V. Maximovb, Y. M. Shernyakovb, B. V. Volovikb, A. F. Tsatsul'nikovb, P. S. Kop'evb, Zh.I. Alferov: Quantum Dot LASERS : breakthrough in optoelectronics, Thin Solid Films 367 (2000).
Cited by
5 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献